PT4800E0000F

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PT4800E0000F datasheet

• Маркировка
  PT4800E0000F
• Производитель
  Sharp Microelectronics
• Описание
  Sharp Microelectronics PT4800E0000F Collector Emitter Voltage Vces: 0.4V Collector- Emitter Voltage Vceo Max: 35 V Current - Collector (ic) (max): 20mA Current - Dark (id) (max): 100?µA Current Ic Typ: 400mA External Depth: 1.5mm External Length / Height: 3.5mm Fall Time: 3.5 us ID_COMPONENTS: 2744466 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dark Current: 100 nA Maximum Operating Temperature: + 85 C Maximum Power Dissipation: 75 mW Minimum Operating Temperature: - 25 C Mounting Type: Through Hole No. Of Pins: 2 Orientation: Side View Package / Case: Thin Type Power - Max: 75mW Power Consumption: 75mW Rise Time: 3 us Rohs Compliant: Yes Series: * Svhc: No SVHC (15-Dec-2010) Transistor Case Style: Side Looking Transistor Polarity: NPN Type: Phototransistor Viewing Angle: 35?‚?° Voltage - Collector Emitter Breakdown (max): 35V Wavelength: 800nm Wavelength Typ: 800nm
• Количество страниц
  7 шт.
• Форматы файла
  HTML, PDF

  (Для просмотра требуется Adobe Acrobat Reader)

Скачать datasheet PT4800E0000F.pdf
Файл формата Pdf 73,53 KB